Freescale Semiconductor Technical Data
Document Number: MRF6S19200H Rev. 0, 3/2008
RF Power Field Effect Transistors
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Freescale Semiconductor Technical Data
Document Number: MRF6S19200H Rev. 0, 3/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio applications. www.datasheet4u.com Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 56 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 17.9 dB Drain Efficiency — 29.5% Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 36 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW Output Power Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate - Source
Voltage Range for Improved Class C Operation Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19200HR3 MRF6S19200HSR3
1930 - 1990 MHz, 56 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER
MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF6S19200HR3
CASE 465A - 06, STYLE...
