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Freescale Semiconductor Technical Data
MRF6S21050L Rev. 0, 3/2005
RF Power Field Effect Transisto...
www.DataSheet4U.com
Freescale Semiconductor Technical Data
MRF6S21050L Rev. 0, 3/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.7% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc @ 3.84 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched, Controlled Q, for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications Low Gold Plating Thickness on Leads, 40µ″ Nominal. In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF6S21050LR3 MRF6S21050LSR3
2170 MHz, 11.5 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER
MOSFETs
CASE 465E - 04, STYLE 1 NI - 400 MRF6S21050LR3
CASE 465F - 04, STYLE 1 NI - 400S MRF6S21050LSR3
Table 1. Maximum R...