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MRF6S21100HSR3 Datasheet

Part Number MRF6S21100HSR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF6S21100HSR3 DatasheetMRF6S21100HSR3 Datasheet (PDF)

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 9.

  MRF6S21100HSR3   MRF6S21100HSR3






RF Power Field Effect Transistors

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 950 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.9 dB Drain Efficiency — 27.6% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S21100HR3 MRF6S21100HSR3 2110 - 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S21100HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S21100HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage.


2007-03-23 : 2SC5383    594D    90CLQ100    A4983    A49FL004    A49LF004    A49LF040    BA7024    FYLS-1206xx    K8D6316UBM   


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