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Freescale Semiconductor Technical Data
Document Number: MRF6S21100N Rev. 2, 1/2007
RF Power Field...
www.DataSheet4U.com
Freescale Semiconductor Technical Data
Document Number: MRF6S21100N Rev. 2, 1/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications. Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Bandwidth Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications 200°C Capable Plastic Package N Suffix Indicates Lead - Free Terminations. RoHS Compliant. In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S21100NR1 MRF6S21100NBR1
2110 - 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER
MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S21100NR1
CASE 1484 - 04, STYLE 1 TO - 272...