Freescale Semiconductor Technical Data
Document Number: MRF6S23100H Rev. 0, 8/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems. Typical 2 - Carrier W - CDMA Performa...