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Freescale Semiconductor Technical Data
Document Number: MRF6S23140H Rev. 1, 5/2006
RF Power Field...
www.DataSheet4U.com
Freescale Semiconductor Technical Data
Document Number: MRF6S23140H Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C WLL applications. Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.2 dB Drain Efficiency — 25% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 2390 MHz, 140 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications Low Gold Plating Thickness on Leads, 40μ″ Nominal. RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S23140HR3 MRF6S23140HSR3
2300 - 2400 MHz, 28 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER
MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRF6S23140HR3
Table 1. Maximum Ratings
Rating Drain - Source
Voltage Gate...