ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
Replaced by MRF6S9060NR1/NBR1. There ar...
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
Replaced by MRF6S9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
Typical Single - Carrier N TIDrQaff=ic4C50odmeAs ,8PTohutro=u1g4h
-WCaDttMs AAvPge.,rfIoSrm- 9a5ncCeD@MA88(P0ilMotH, Sz,yVncD,DP=ag2i8ngV,olts, 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — - 47.6 dBc @ 30 kHz Bandwidth
GSM EDGE Application
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