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MRF6V12500GS Transistors Datasheet PDF

RF Power LDMOS Transistors

RF Power LDMOS Transistors

 

 

 

Part Number MRF6V12500GS
Description RF Power LDMOS Transistors
Feature Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel E nhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies b etween 960 and 1215 MHz such as distanc e measuring equipment (DME), transponde rs and secondary radars for air traffic control.
These devices are suitable fo r use in pulse applications, including Mode S ELM.
 Typical Pulse Performa nce: VDD = 50 Volts, IDQ = 200 mA Appl ication Signal Type Pout (1) (W) Fre q.
(MHz) Gps D (dB) (%) Narrowband Pulse 500 Peak Short Pulse (128  sec, 10% Duty Cycle) .
Manufacture NXP
Datasheet
Download MRF6V12500GS Datasheet

MRF6V12500GS

 

 

 


 

 

 

Part Number MRF6V12500GS
Description RF Power LDMOS Transistors
Feature Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel E nhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies b etween 960 and 1215 MHz such as distanc e measuring equipment (DME), transponde rs and secondary radars for air traffic control.
These devices are suitable fo r use in pulse applications, including Mode S ELM.
 Typical Pulse Performa nce: VDD = 50 Volts, IDQ = 200 mA Appl ication Signal Type Pout (1) (W) Fre q.
(MHz) Gps D (dB) (%) Narrowband Pulse 500 Peak Short Pulse (128  sec, 10% Duty Cycle) .
Manufacture NXP
Datasheet
Download MRF6V12500GS Datasheet

MRF6V12500GS

 

 

 

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