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MRF6V12500HS Datasheet

Part Number MRF6V12500HS
Manufacturers NXP
Logo NXP
Description RF Power LDMOS Transistors
Datasheet MRF6V12500HS DatasheetMRF6V12500HS Datasheet (PDF)

Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM.  Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA Application Signal Type Pout (1) (W.

  MRF6V12500HS   MRF6V12500HS






Part Number MRF6V12500HSR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF6V12500HS DatasheetMRF6V12500HSR3 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 0, 9/2009 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (50 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power .

  MRF6V12500HS   MRF6V12500HS







Part Number MRF6V12500HR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF6V12500HS DatasheetMRF6V12500HR3 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 0, 9/2009 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (50 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power .

  MRF6V12500HS   MRF6V12500HS







Part Number MRF6V12500H
Manufacturers NXP
Logo NXP
Description RF Power LDMOS Transistors
Datasheet MRF6V12500HS DatasheetMRF6V12500H Datasheet (PDF)

Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM.  Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA Application Signal Type Pout (1) (W.

  MRF6V12500HS   MRF6V12500HS







RF Power LDMOS Transistors

Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM.  Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA Application Signal Type Pout (1) (W) Freq. (MHz) Gps D (dB) (%) Narrowband Pulse 500 Peak Short Pulse (128 sec, 10% Duty Cycle) 1030 19.7 62.0 Narrowband Mode S ELM Pulse (48  (32 sec on, 18 sec off), Period 2.4 msec, 6.4% Long--term Duty Cycle) 500 Peak 1030 19.7 62.0 Broadband Pulse 500 Peak 960--1215 18.5 57.0 (128 sec, 10% Duty Cycle) 1. Minimum output power for each specified pulse condition.  Capable of Handling 10:1 VSWR @ 50 Vdc, 1030 MHz, 500 Watts Peak Power Features  Characterized with Series Equivalent Large--Signal Impedance Parameters  Internally Matched for Ease of Use  Qualified up to a Maximum of 50 VDD Operation  Integrated ESD Protection  Greater Negative Gate--Source Voltage Range for Improved Class C Operation Document Number: MRF6V12500H Rev. 5, 7/2016 MRF6V12500H MRF6V12500HS MRF6V12500GS 960--1215 MHz, 500 W, 50 V PULSE RF POWER LDMOS TRANSISTORS NI--780H--2L MRF6V12500H NI--780S--2L MRF6V12500HS NI--780GS--2L MRF6V12500GS Gate 2 1 Drain (Top View) Note: The bac.


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