MRF6V2010N

NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.  Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power gain — 23.9 dB Drain efficiency — 62%  Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW output power Features  Characterized with series equivalent large--signal impedance parameters  Qualified up to a maximum of 50 VDD operation  Integrated ESD protection  225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10--450 MHz, 10 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs TO--270--2 PLASTIC MRF6V2010N TO--272--2 PLASTIC MRF6V2010NB TO--270G--2 PLASTIC MRF6V2010GN Gate 2 1 Drain (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  2007–2008, 2010, 2016 NXP B.V. RF Device Data NXP Semiconductors MRF6V2010N MRF6V2010NB MRF6V2010GN 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic VDSS VGS Tstg TC TJ Symbol --0.5, +110 --0.5, +10 -- 65 to +150 150 225 Value ...