MRF6V2300N

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts Power Gain — 27 dB Drain Efficiency — 68% Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 300 Watts CW Output Power Features Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C Operation Excellent Thermal Stability Facilitates Manual Gain Control, ALC and Modulation Techniques 225°C Capable Plastic Package RoHS Compliant MRF6V2300N MRF6V2300NB PREPRODUCTION 10 - 450 MHz, 300 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V2300N CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V2300NB PARTS ARE SINGLE - ENDED Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TJ Value - 0.5, +110 - 6.0, +10 - 65 to +150 225 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature TBD°C, TBD W CW...