MRF6V4300NR1

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 450 MHz Power Gain — 22 dB Drain Efficiency — 60% Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6V4300N Rev. 3, 4/2010 MRF6V4300NR1 MRF6V4300NBR1 10--600 MHz, 300 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6V4300NR1 CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6V4300NBR1 PARTS ARE SINGLE--ENDED RFin/VGS RFin/VGS RFout/VDS RFout/VDS Table 1. Maximum Ratings (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +110 Gate--Source Voltage VGS --6.0, +10 Storage Temperature Range Tst...