Freescale Semiconductor Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications.
Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 1...
