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MRF750 Datasheet

Part Number MRF750
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF TRANSISTOR
Datasheet MRF750 DatasheetMRF750 Datasheet (PDF)

MRF750 NPN SILICON RF TRANSISTOR PACKAGE STYLE .205" 4L PILL DESCRIPTION: The MRF750 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V. 4 A D 3 2 1 C FEATURES INCLUDE: • High Power Gain • Infinite VSWR G H B F E MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O DIM A B C D MINIMUM inches / mm MAXIMUM inches / mm 200 mA 13 V 2.5 W @ TC = 25 C -65 C to +150 C -65 C to +150 C 28.5 C/W O O O O .976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 .1.

  MRF750   MRF750






Part Number MRF752
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF TRANSISTOR
Datasheet MRF750 DatasheetMRF752 Datasheet (PDF)

MRF752 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF752 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V. PACKAGE STYLE .280" 4L PILL FEATURES INCLUDE: • High Power Gain • Infinite VSWR 3 1 4 MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC 1.2 A 13 V 15 W @ TC = 25 °C -65 °C to +150 °C -65 °C to +150 °C 11.7 °C/W 2 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob GPE η IC = 25 mA IC = 25 mA IE = 3.0 .

  MRF750   MRF750







NPN SILICON RF TRANSISTOR

MRF750 NPN SILICON RF TRANSISTOR PACKAGE STYLE .205" 4L PILL DESCRIPTION: The MRF750 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V. 4 A D 3 2 1 C FEATURES INCLUDE: • High Power Gain • Infinite VSWR G H B F E MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O DIM A B C D MINIMUM inches / mm MAXIMUM inches / mm 200 mA 13 V 2.5 W @ TC = 25 C -65 C to +150 C -65 C to +150 C 28.5 C/W O O O O .976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 .106 / 2.700 .039 / 1.000 .004 / 0.100 .200 / 5.100 1.00 / 25.400 1.00 / 25.400 .031 / 0.800 .139 / 3.400 .047 / 1.200 .006 / 0.150 .208 / 5.300 E F G H 1 & 3 = EMITTER 2 = BASE 4 = COLLECTOR CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob GPE η IC = 10 mA IC = 10 mA IE = 1.0 mA VCB = 9.0 V VCE = 5.0 V VCB = 7.5 V TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 13 25 4.0 500 UNITS V V V µA --- IC = 50 mA f = 1.0 MHz Pout = 500 mW fo = 470 MHz 20 70 3.5 5.0 pF dB % VCC = 7.5 V 10 55 11 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 .


2005-10-23 : 74268    TX-5B    TX-25MD1P    TX-1033S    TX-S    XAMR20A    1S953    1S954    1S955    ELD426GWA   


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