MRF7S19170HSR3

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 17.2 dB Drain Efficiency — 32% Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 170 Watts CW Peak Tuned Output Power Pout @ 1 dB Compression Point w 170 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S19170HR3 MRF7S19170HSR3 1930 - 1990 MHz, 50 W AVG., 28 V SINGLE W - CDMA LATERAL N - C...