MRF7S19210HR3

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev. 0, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 20 dB Drain Efficiency — 29% Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 33 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 190 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) Typical Pout @ 1 dB Compression Point ] 190 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S19210HR3 MRF7S19210HSR3 1930 - 1990 MHz, 63 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CA...