Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
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Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral
MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications.
Typical Single--Carrier W--CDMA
1C4h0a0nnmeAl ,BPanoudtw=id5t0h
Watts Avg., f = 3.84 MHz,
=Pe2r1fo6r7m.5anMcHe:z,VIDQDM=a2g8nVituodltes,CIDliQpp=ing, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW Output Power
Pout @ 1 dB Compression Point ≃ 170 Watts CW Features
100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source
Voltage Range for Improved Class C
Operation
Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Document Number: MRF7S21170H Rev. 7, 2/2012
MRF7S21170HR3 MRF7S21170HSR3
2110--2170 MHz, 50 W AVG., 28 V SINGLE W--CDMA
LATERAL N--CHANNEL RF POWER
MOSFETs
CASE 465B--04 NI--880
MRF7S21170HR3
CASE 465C--03 NI--880S
MRF7S21170HSR3
Table 1. Maximu...