MRF837

www.DataSheet4U.com MRF837 NPN SILICON RF LOW POWER TRANSISTOR DESCRIPTION: The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. PACKAGE STYLE MACRO-X MILLIMETERS DIM MIN A C D F G 4.44 1.90 0.84 0.20 0.76 7.24 10.54 --MAX 5.21 2.54 0.99 0.30 0.14 8.13 11.43 1.65 INCHES MIN 0.175 0.075 0.033 0.008 0.030 0.285 0.415 --MAX 0.205 0.100 0.039 0.012 0.045 0.320 0.450 0.065 FEATURES INCLUDE: Min gain 8.0 dB @ 750 mW/870 MHz Silicon Nitride passivated Low cost Plastic Package K L N IC VCBO PDISS TJ TSTG θJC 200 mA 36 V 1.0 W @ TC = 25 °C -65 °Cto +150 °C -65 °Cto +150 °C 40 °C/W 1 = COLLECTOR 2 =EMITER 3 = BASE CHARACTERISTICS SYMBOL BVCES BVCEO IC = 5.0 mA IC = 5.0 mA IE = 100 µA VCE = 15 V VCE = 10 V VCB = 15 V TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 16 4.0 100 UNITS V V V µA --pF dB % ww.DataSheet4U.com BVEBO ICES hFE COB PG ηC IC = 50 mA f = 1.0 MHz POUT = 0.75 W f = 870 MHz 30 1.8 8.0 55 10 60 200 2.5 VCE = 12.5 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 REV. A www.DataSheet4U.com 1/1 Specifications are subject to change without notice. DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSHeet4U.com MAXIMUM RATINGS ...