MRF857S

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF857/D The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 – 960 MHz. Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.1 Watts CW Minimum Power Gain = 12.5 dB Minimum ITO = + 43 dBm Typical Noise Figure = 5.25 dB Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800 – 960 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power Will Withstand RF Input Overdrive of 0.4 W CW Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF857S CLASS A 800 – 960 MHz 2.1 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR CASE 305D–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 50°C Derate above 50°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Characteristic Thermal Resistance (TJ = 150°C, TC = 50°C) Symbol RθJC Symbol V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES Min 28 55 55 4 — Typ 35 85 85 5 — Value 30 55 4 17 0.114 200 ...