TRANSISTOR. MRF857S Datasheet

MRF857S Datasheet PDF


MRF857S
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800 – 960 MHz.
Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics
Output Power = 2.1 Watts CW
Minimum Power Gain = 12.5 dB
Minimum ITO = + 43 dBm
Typical Noise Figure = 5.25 dB
Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800 – 960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power
Will Withstand RF Input Overdrive of 0.4 W CW
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF857/D
MRF857S
CLASS A
800 – 960 MHz
2.1 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 305D–01, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance (TJ = 150°C, TC = 50°C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0)
Collector Cutoff Current (VCB = 24 V, IE = 0)
Symbol
VCEO
VCBO
VEBO
PD
TJ
Tstg
Symbol
RθJC
Symbol
Min
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
28
55
55
4
Value
30
55
4
17
0.114
200
– 65 to +150
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
°C
Max Unit
8.4 °C/W
Typ Max Unit
35 — Vdc
85 — Vdc
85 — Vdc
5 — Vdc
— 1 mA
(continued)
REV 3
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
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MRF857S
1
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Part MRF857S
Description NPN SILICON RF POWER TRANSISTOR
Feature MRF857S; www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF857/D The RF.
Manufacture Motorola
Datasheet
Download MRF857S Datasheet

MRF857S Datasheet
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MRF857S
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ELECTRICAL CHARACTERISTICS — continued
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 A, VCE = 5 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.3 A, f = 840 – 900 MHz,
Power Output = 2.1 W)
Load Mismatch
(Po = 2.1 W)
(VCE = 24 V, IC = 0.3 A, f = 840 MHz,
Load VSWR = 30:1, All Phase Angles)
RF Input Overdrive
(VCE = 24 V, IC = 0.3 A, f = 840 MHz)
No degradation
Third Order Intercept Point
(VCE = 24 V, IC = 0.3 A)
(f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = – 40 dBc)
Noise Figure
(VCE = 24 V, IC = 0.3 A, f = 900 MHz)
Input Return Loss
(VCE = 24 V, IC = 0.3 A, f = 840 – 900 MHz,
Power Output = 2.1 W)
Symbol Min Typ Max Unit
hFE 30 60 120 —
Cob 2.4 3.3 4.4 pF
Pg
ψ
Pin(over)
ITO
12.5 13.5 —
No Degradation in
Output Power
— — 0.4
+ 43 + 44.5 —
dB
W
dBm
NF — 5.25 — dB
IRL
– 15 –10
dB
VCE
(V)
24
IC f
(A) (MHz)
0.3 800
820
840
860
880
900
920
940
960
Table 1. MRF857S Common Emitter S–Parameters
S11
|S11|
0.915
0.915
0.915
0.913
0.914
0.914
0.913
0.915
0.916
φ
165
165
165
164
164
163
163
162
162
S21
|S21|
2.098
2.049
1.991
1.951
1.912
1.865
1.832
1.783
1.748
φ
54
53
52
51
50
49
48
47
46
S12
|S12|
0.037
0.038
0.038
0.039
0.040
0.041
0.042
0.043
0.043
φ
58
58
58
59
59
59
59
59
59
S22
|S22|
φ
0.343
0.345
0.349
0.352
0.355
0.359
0.362
0.366
0.369
–157
–157
–157
–158
–158
–158
–158
–159
–159
Table 2. Zin and ZOL* versus Frequency
f
(MHz)
Zin
(Ohms)
ZOL*
(Ohms)
840 1.5 4.4 18.4 – 26.3
870 1.7 4.7 18.0 – 26.1
900 1.5 4.8 14.9 – 26.2
VCE = 24 V, IC = 0.3 A, Po = 2.1 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
MRF857S
2
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MOTOROLA RF DEVICE DATA
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MRF857S
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R1
R2
R3
INPUT
R8
VCE
+
C1
F1
V_SUPPLY
Q1
Q2
R9
R4 R5
R7
R6
TL2
TL1 C10
TL3
B1
+
C2
C3 B2
C4 B3
L1
TL6
C5
C6
TL7
DUT
L2
C7
TL5
TL9 TL8
TL10
C11
R10
B4
+
C8
C9
TL11 TL14
C12
TL13
TL16
TL12 TL15
TL4
OUTPUT
B1, B4
B2, B3
C1
C2, C8
C3, C9
C4, C7
C5, C6
C10, C12
C11
F1
L1, L2
Q1
Q2
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R1
R2
R3
R4
R5
R6
R7
R8
R9, R10
TL1 – TL16
V_Supply
VCE
Board
330 , 1/4 W
500 Potentiometer, 1/4 W
4.7K , 1/4 W
2 x 4.7K , 1/4 W
47 , 2 W
75 , 1/4 W
4.7 , 1/4 W
10 , 3 W
4 x 39 , 1/8 W Chip Resistors in Parallel
Microstrip Transmission Line
+ 27 Vdc ± 0.5 V Due to Resistor Tolerance
+ 24 Vdc @ 0.3 A
0.030Glass–Teflon® 2 oz. Cu, εr = 2.55
Figure 1. MRF857S Class A RF Test Fixture Schematic
MOTOROLA RF DEVICE DATA
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MRF857S
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