MRF858

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF858/D The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 – 960 MHz. Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.6 Watts CW Minimum Power Gain = 11 dB Minimum ITO = + 44.5 dBm Typical Noise Figure = 6 dB Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800– 960 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power Will Withstand RF Input Overdrive of 0.85 W CW Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF858 MRF858S CLASS A 800 – 960 MHz 3.6 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR CASE 319–07, STYLE 2 MRF858 CASE 319A–02, STYLE 2 MRF858S MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 50°C Derate above 50°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Characteristic Thermal Resistance (TJ = 150°C, TC = 50°C) Symbol RθJC Symbol Min Typ Value 30 55 4 20 0.138 200 – 65 to +150 Unit Vdc Vdc ...