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MRF897R Datasheet

Part Number MRF897R
Manufacturers Motorola
Logo Motorola
Description RF POWER TRANSISTOR
Datasheet MRF897R DatasheetMRF897R Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF897R/D The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800– 970 MHz. • Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Minimum Gain = 10.5 dB @ 900 MHz, class–AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP) Maximum Intermodulati.

  MRF897R   MRF897R






Part Number MRF897
Manufacturers Motorola
Logo Motorola
Description RF POWER TRANSISTOR
Datasheet MRF897R DatasheetMRF897 Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF897/D The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800– 970 MHz. • Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Minimum Gain = 10 dB @ 900 MHz, class–AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP) Maximum Intermodulation .

  MRF897R   MRF897R







RF POWER TRANSISTOR

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF897R/D The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800– 970 MHz. • Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Minimum Gain = 10.5 dB @ 900 MHz, class–AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP) Maximum Intermodulation Distortion –30 dBc @ 30 Watts (PEP) • Characterized with Series Equivalent Large–Signal Parameters from 800 to 960 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power • Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal– Migration • Circuit Board Photomaster Available by Ordering Document MRF897RPHT/D from Motorola Literature Distribution. MRF897R 30 W, 900 MHz RF POWER TRANSISTOR NPN SILICON CASE 395B–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 30 60 4.0 4.0 105 0.60 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Max 1.67 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C un.


2006-07-10 : 20J321    TEC4033    MN101C39C    MN101C399    REF02    REF-02    REF02    AN7072    VL82C033    VL82C031   


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