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MRF8HP21130HR3 Datasheet

Part Number MRF8HP21130HR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF8HP21130HR3 DatasheetMRF8HP21130HR3 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg., IQ Magnitude Clipping.

  MRF8HP21130HR3   MRF8HP21130HR3






RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 14.2 14.1 14.0 ηD (%) 46.4 45.7 45.1 Output PAR (dB) 7.9 7.7 7.6 ACPR (dBc) --35.4 --35.3 --34.8 MRF8HP21130HR3 MRF8HP21130HSR3 2110-2170 MHz, 28 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 157 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) www.DataSheet4U.net • Typical Pout @ 3 dB Compression Point ≃ 166 Watts CW (1) Features • Advanced High Performance In--Package Doherty • Production Tested in a Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Ro.


2011-07-07 : 2SB0928    2SB0928A    2SB928    2SB928A    2SB0929    2SB0929A    2SB929    2SB929A    2SB0930    2SB0930A   


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