MRF8S21140HR3 Datasheet





[Recommendation Datasheet]

MRF8S21140HR3 Datasheet - RF Power Field Effect Transistors

MRF8S21140HR3   MRF8S21140HR3  

Search Keywords: MRF8S21140HR3, datasheet, pdf, NXP, RF, Power, Field, Effect, Transistors, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev. 0, 5/ 2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOS FETs Designed for W-CDMA and LTE base station applications with frequencies f rom 2110 to 2170 MHz. Can be used in Cl ass AB and Class C for all typical cell ular base station modulation formats. Typical Single-Carrier W-CDMA Perfor mance: VDD = 28 Volts, IDQ = 970 mA, Po ut = 34 Watts Avg., IQ Magnitude Clippi ng, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probabilit y on CCDF. Frequency Gps (dB) hD Out put PAR ACPR (%) (dB) (dBc) MRF8S21 140HR3 MRF8S21140HSR3 2110-2170 MHz, 34 W AVG., 28 V W-CDMA, LTE LATERAL N-CH

Manufacture Part Number Description

NXP

MRF8S21140HR3

RF Power Field Effect Transistors




Alternate Search Terms:
MRF8S21140HR3 datasheet MRF8S21140HR3 component MRF8S21140HR3 integrated circuit MRF8S21140HR3 schematic MRF8S21140HR3 application note RF8S21140HR3 F8S21140HR3 8S21140HR3 MRF8S21140HR MRF8S21140H MRF8S21140

@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)