MRF8S21140HR3 Datasheet

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MRF8S21140HR3 Datasheet - RF Power Field Effect Transistors

MRF8S21140HR3   MRF8S21140HR3  

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Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev. 0, 5/ 2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOS FETs Designed for W-CDMA and LTE base station applications with frequencies f rom 2110 to 2170 MHz. Can be used in Cl ass AB and Class C for all typical cell ular base station modulation formats. Typical Single-Carrier W-CDMA Perfor mance: VDD = 28 Volts, IDQ = 970 mA, Po ut = 34 Watts Avg., IQ Magnitude Clippi ng, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probabilit y on CCDF. Frequency Gps (dB) hD Out put PAR ACPR (%) (dB) (dBc) MRF8S21 140HR3 MRF8S21140HSR3 2110-2170 MHz, 34 W AVG., 28 V W-CDMA, LTE LATERAL N-CH

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RF Power Field Effect Transistors

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