MRF8S21140HSR3 Datasheet (data sheet) PDF





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MRF8S21140HSR3 Datasheet - RF Power Field Effect Transistors

MRF8S21140HSR3   MRF8S21140HSR3  

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Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev. 0, 5/ 2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOS FETs Designed for W-CDMA and LTE base station applications with frequencies f rom 2110 to 2170 MHz. Can be used in Cl ass AB and Class C for all typical cell ular base station modulation formats. Typical Single-Carrier W-CD

Manufacture Part Number Description

NXP

MRF8S21140HSR3

RF Power Field Effect Transistors




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