MRF8S9102NR3 Datasheet





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MRF8S9102NR3 Datasheet - RF Power Field Effect Transistor

MRF8S9102NR3   MRF8S9102NR3  

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Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Cha nnel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applicat ions with frequencies from 865 to 960 M Hz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single- -Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Av g., IQ Magnitude Clipping, Channel Band width = 3.84 MHz, Input Signal PAR = 7. 5 dB @ 0.01% Probability on CCDF. Freq uency Gps (dB) ηD Output PAR ACPR ( %) (dB) (dBc) 920 MHz 940 MHz 960 MH z 23.1 23.1 22.8 36.4 36.4 36.6 6.3 --35.5 6.2 --36.1 6.1 --35.8 • Capab le of Handling 10:1 VSWR, @ 32 Vdc, 940 M

Manufacture Part Number Description

Freescale Semiconductor

MRF8S9102NR3

RF Power Field Effect Transistor




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