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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF959T1/D
The RF Line
NPN Silicon...
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF959T1/D
The RF Line
NPN Silicon Low Noise Transistors
Motorola’s MRF959 is a high performance silicon NPN transistor designed for use in high gain, low noise small–signal
amplifiers. The MRF959 is well suited for low
voltage applications. This device features a 9 GHz DC current gain–bandwidth product with excellent linearity. Low Noise Figure, NFmin = 1.3 dB (Typ) @ 1 GHz @ 5 mA High Current Gain–Bandwidth Product, ft = 9 GHz @ 30 mA Maximum Available Gain, MAG = 17 dB (Typ) @ 1 GHz @ 15 mA Output Third Order Intercept, OIP3 = +30 dBm @ 1 GHz @ 30 mA Fully Ion–Implanted with Gold Metallization and Nitride Passivation Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per Reel
MRF959T1
ICmax = 100 mA LOW NOISE TRANSISTORS
CASE 463–01, STYLE 1 (SC–90)
MAXIMUM RATINGS
Rating Collector–Emitter
Voltage Collector–Base
Voltage Emitter–Base
Voltage Power Dissipation (1) TC = 75°C Derate linearly above TC = 75°C @ Collector Current — Continuous (2) Maximum Junction Temperature Storage Temperature Thermal Resistance, Junction to Case
DataShee
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Symbol VCEO VCBO VEBO PDmax IC TJmax Tstg RθJC
Value 10 20 1.5 0.150 2 100 150 – 55 to +150 500
Unit Vdc Vdc Vdc Watts mW/°C mA °C °C °C/W
DEVICE MARKINGS
MRF959T1 = V1 (1) To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case temperature is measured on collector lead adjacent to the p...