Freescale Semiconductor Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral ...
Freescale Semiconductor Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral
MOSFETs
RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
2000 MHz. These devices are fabricated using Freescale’s enhanced
ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
Typical Performance: VDD = 50 Volts
Frequency (MHz)
Signal Type
Pout (W)
Gps (dB)
ηD IMD (%) (dBc)
30--512 (1,3)
Two--Tone (100 kHz spacing)
100 PEP
19.0
30.0
--30
512 (2)
CW
100
27.2 70.0
—
512 (2)
Pulse (200 μsec, 20% 100 Peak Duty Cycle)
26.0
70.0
—
Load Mismatch/Ruggedness
Frequency (MHz)
Signal Type
VSWR
Pout (W)
Test
Voltage
Result
512 (2)
Pulse
>65:1
130
50 No Device
(100 μsec, 20% at all Phase (3 dB
Degradation
Duty Cycle)
Angles Overdrive)
512 (2)
CW
126 (3 dB Overdrive)
1. Measured in 30--512 MHz broadband reference circuit. 2. Measured in 512 MHz narrowband test circuit. 3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Features
Wide Operating Frequency Range Extremely Rugged Unmatched, Capable of Very Broadband Operation Integrated Stability Enhancements Low Thermal Resistance Integrated ESD Protection Circuitry In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Document Number: MRFE6VP100H Rev. 0, 5/2012
MRFE...
