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MRFE6VP61K25N Transistors Datasheet PDF

RF Power LDMOS Transistors

RF Power LDMOS Transistors

 

 

 

Part Number MRFE6VP61K25N
Description RF Power LDMOS Transistors
Feature Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25N Rev.
2, 4/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mod e Lateral MOSFETs These high ruggednes s devices are designed for use in high VSWR industrial, medical, broadcast, ae rospace and mobile radio applications.
Their unmatched input and output design allows for wide frequency range use fr om 1.
8 to 600 MHz.
Typical Performance : VDD = 50 Vdc Frequency (MHz) Signal Type 87.
5–108 (1,2) CW 230 (3) P ulse (100 sec, 20% Duty Cycle) Pout (W) 1309 CW 1250 Peak Gps (dB) 24.
1 2 3.
0 D (%) 77.
6 7 .
Manufacture NXP
Datasheet
Download MRFE6VP61K25N Datasheet

MRFE6VP61K25N

 

 

 


 

 

 

Part Number MRFE6VP61K25N
Description RF Power LDMOS Transistors
Feature Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25N Rev.
2, 4/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mod e Lateral MOSFETs These high ruggednes s devices are designed for use in high VSWR industrial, medical, broadcast, ae rospace and mobile radio applications.
Their unmatched input and output design allows for wide frequency range use fr om 1.
8 to 600 MHz.
Typical Performance : VDD = 50 Vdc Frequency (MHz) Signal Type 87.
5–108 (1,2) CW 230 (3) P ulse (100 sec, 20% Duty Cycle) Pout (W) 1309 CW 1250 Peak Gps (dB) 24.
1 2 3.
0 D (%) 77.
6 7 .
Manufacture NXP
Datasheet
Download MRFE6VP61K25N Datasheet

MRFE6VP61K25N

 

 

 

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