MRFE6VP6300HR3

www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 300 Peak 300 Avg. f (MHz) 230 130 Gps (dB) 26.5 25.0 ηD (%) 74.0 80.0 IRL (dB) --16 --15 MRFE6VP6300HR3 MRFE6VP6300HSR3 1.8-600 MHz, 300 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles 300 Watts CW Output Power 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec Capable of 300 Watts CW Operation Features Unmatched Input and Output Allowing Wide Frequency Range Utilization Device can be used Single--Ended or in a Push--Pull Configuration Qualified Up to a Maximum of 50 VDD Operation Characterized from 30 V to 50 V for Extended Power Range Suitable for Linear Application with Appropriate Biasing Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Characterized with Series Equivalent Large--Signal Impedance...