NXP Semiconductors Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFE...
NXP Semiconductors Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral
MOSFETs
RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
Typical Performance: VDD = 50 Volts
Frequency (MHz)
Signal Type
Pout (W)
1.8 to 30 (2,6)
Two--Tone (10 kHz spacing)
25 PEP
30--512 (3,6)
Two--Tone (200 kHz spacing)
25 PEP
512 (4)
Pulse (100 sec, 20% Duty Cycle)
25 Peak
512 (4)
CW
25
1030 (5)
CW
25
Gps (dB) 25
17.1
25.4
25.5 22.5
D (%) 51
30.1
74.5
74.7 60
IMD (1) (dBc) --30
--32
—
— —
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
30 (2)
CW >65:1 at all Phase Angles
512 (3)
CW
512 (4) 512 (4)
Pulse (100 sec, 20%
Duty Cycle)
CW
1030 (5)
CW
Pin (W)
0.23 (3 dB Overdrive)
1.6 (3 dB Overdrive)
0.14 Peak (3 dB
Overdrive)
0.14 (3 dB Overdrive
0.34 (3 dB Overdrive
Test
Voltage
50
Result
No Device Degradation
1. Distortion products are referenced to one of two tones. See p. 13, 20. 2. Measured in 1.8--30 MHz broadband reference circuit. 3. Measured in 30--512 MHz broadband reference circuit. 4. Measured in 512 MHz narrowband test circuit. 5. Measured in 1030 MHz narrowband test circuit. 6. The values shown are the minimum measured performance numbers across the in-
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