MRFG35010MT1

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRFG35010MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 900 mW Power Gain — 10 dB Efficiency — 28% MRFG35010MT1 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT Freescale Semiconductor, Inc... 9 Watts P1dB @ 3.55 GHz Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. CASE 466 - 02, STYLE 1 PLD - 1.5 PLASTIC MAXIMUM RATINGS Rating Drain - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature(1) Symbol VDSS PD VGS Pin Tstg Tch TC Symbol RθJC Value 15 22.7(2) 0.15(2) -5 33 - 65 to +150 175 - 20 to +85 Unit Vdc Watts W/°C Vdc dBm °C °C °C Operating Case Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Max 6.6(2) Unit °C/W MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22 - A113 (1) For reliable operation, the operating channel...