MRFG35020AR1

Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 0, 1/2008 www.DataSheet4U.com Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications. Typical WiMAX Performance: VDD = 12 Volts, IDQ = 300 mA, Pout = 2 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 11.5 dB Drain Efficiency — 22% RCE — - 33 dB Meets ETSI Type G Mask 20 Watts P1dB @ 3500 MHz, CW Features Supports up to 28 MHz Bandwidth OFDM Signals Internally Input Matched for Ease of Use High Gain, High Efficiency and High Linearity Excellent Thermal Stability RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. MRFG35020AR1 3.5 GHz, 20 W, 12 V WiMAX POWER FET GaAs PHEMT CASE 360E - 01, STYLE 2 NI - 360 SHORT LEAD Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Symbol VDSS VGS Pin Tstg Tch TC Symbol RθJC Value 15 -5 34 - 40 to +175 175 - 40 to +90 Unit Vdc Vdc dBm °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Value (2) 2.7 Unit °C/W 1. For reliable operation, the operatin...