NXP Semiconductors Technical Data
Document Number: MRFX1K80H Rev. 1, 09/2018
RF Power LDMOS Transistor
High Ruggedness...
NXP Semiconductors Technical Data
Document Number: MRFX1K80H Rev. 1, 09/2018
RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral
MOSFET
MRFX1K80H
This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from 1.8 to 400 MHz.
Typical Performance
Frequency (MHz)
Signal Type
VDD (V)
Pout (W)
Gps (dB)
D (%)
27 (1)
CW 65 1800 CW 27.8 75.6
64 Pulse (100 sec, 10% Duty Cycle) 65 1800 Peak 27.1 69.5
81.36 87.5–108 (2,3)
CW CW
62 1800 CW 25.1 78.7 60 1600 CW 23.6 82.5
123/128 Pulse (100 sec, 10% Duty Cycle) 65 1800 Peak 25.9 69.0
144 CW 65 1800 CW 23.5 78.0
175 CW 60 1560 CW 23.5 75.9
174–230 Doherty (3)
DVB--T (8k OFDM)
63 250 Avg. 21.3 43.3
230 (4)
Pulse (100 sec, 20% Duty Cycle) 65 1800 Peak 25.1 75.1
325 Pulse (12 sec, 10% Duty Cycle) 63 1700 Peak 22.8 64.9
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin Test
(W)
Voltage
Result
230 (4)
Pulse
> 65:1 at all 14 Peak 65 No Device
(100 sec, 20% Phase Angles (3 dB
Degradation
Duty Cycle)
Overdrive)
1. Measured in 27 MHz reference circuit (page 6). 2. Measured in 87.5–108 MHz broadband reference circuit (page 11). 3. The values shown are the center band performance numbers across the indicated
frequency range. 4. Measured in 230 MHz production test fixture (page 17).
1.8–400 MHz, 1800 W CW, 65 V WIDEBAND
RF POWER L...
