140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1011
www.datasheet4u.com
...
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1011
www.datasheet4u.com
RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Features
OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD — 30 dB GOLD METALLIZATION COMMON EMITTER POUT = 250 W PEP WITH 14.5 dB GAIN
DESCRIPTION:
The MS1011 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
110 55 4 40 330 +200 –65 to +150
V V V A W °C °C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 0.4 ° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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MS1011
www.datasheet4u.com
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC
Symbol Test Conditions Min. Value Typ. Max. Units
BVCES BVCEO BVEBO ICEO ICES hFE
IC = 200 mA IC = 200 mA IE = 20 mA VCE = 30 V VCE = 60 V VCE = 6 V
VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IE = 0 mA IC = 1.4 A
110 55 4 10 10 45
V V V mA mA
15
DYNAMIC
Symbol Test Conditions Min. Value Typ. Max. Units
POUT GP * IMD * çC * COB
Note:
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