140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1051
www.datasheet4u.com
...
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1051
www.datasheet4u.com
RF & MICROWAVE TRANSISTORS HF SSB APLICATIONS
Features
30 MHz 12.5 VOLTS POUT = 100 WATTS GPE = 12.0 dB MINIMUM IMD = –30 dBc GOLD METALLIZATION COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO VCEO VEBO IC PDISS TJ T STG
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Device Current Power Dissipation Junction Temperature Storage TEmperature
Value
36 18 4.0 20 290 +200 -65 to +150
Unit
V V V A W °C °C
THERMAL DATA
RTH(J-C) Thermal Resistance Junction-case 0.6 °C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 11/2005
MS1051
www.datasheet4u.com
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC
Symbol
BVCBO BVCES BVCEO BVEBO ICES hFE IC = 100mA IC = 100mA IC = 10mA IE = 20mA VCE = 15V VCE = 5V
Test Conditions Min.
IE = 0mA VBE = 0V IB = 0mA IC = 0mA IC = 0mA IC = 5A 36 36 18 4.0 --20
Value Typ.
-------------
Max.
--------20 200
Unit
V V V V mA ---
DYNAMIC
Symbol
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