MS1078

MS1078 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION www.datasheet4u.com KEY FEATURES W W W . Microsemi . COM The MS1078 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Optimized for SSB !" 30 MHz !" 28 Volts !" IMD –30dB !" Common Emitter !" Gold Metallization !" POUT = 130 W PEP !" GP = 12 dB Gain !" APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS HF SSB Applications !" ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 70 35 4.0 12 175 +200 -65 to +150 Unit V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 1.0 °C/W MS1078 Copyright  2000 MSC1611.PDF 2000-11-06 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 1 MS1078 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW W W W . Microsemi . COM www.datasheet4u.com STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C Symbol BVCES BVCEO BVEBO ICES hFE IC = 50 mA IC = 100 mA IE = 20 mA VCE =35 V VCE = 5 V Test Conditions VBE = 0 V IB = 0 mA IC = ...