MS1079
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RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Features
• • • • • 30 MHz 50 VOLTS POUT = 22...
MS1079
www.datasheet4u.com
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Features
30 MHz 50 VOLTS POUT = 220 W GP = 13 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO VCEO VEBO IC PDISS TJ TSTG
Parameter
Value
110 55 4.0 12 320 +200 -65 to +150
Unit
V V V A W °C °C
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Thermal Data
RTH(J-C) Junction-case Thermal Resistance 0.7 °C/W
053-7052 Rev - 10-2002
MS1079
www.datasheet4u.com
STATIC
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Symbol
BVCBO BVCEO BVEBO ICEO ICES hFE IC = 200mA IC = 200mA IE = 20mA VCE = 30V VCE = 55V VCE = 6V
Test Conditions Min.
IE = 0mA IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 10A 110 55 4.0 ----15
Value Typ.
-------------
Max.
------5 10 80
Unit
V V V mA mA ---
DYNAMIC
Symbol POUT Gp IMD ηC COB
Conditions f =30 MHz f =30 MHz f =30 MHz f =30 MHz f = 1 MHz f1= 30.000 MHz
Test Conditions Min.
VCE = 50 V VCE = 50 V VCE = 50 V VCE = 50 V VCB = 50 V f2 = 30.001 MHz ICQ=150mA ICQ=150mA ICQ=150mA ICQ=150mA 220 13 --40 ---
Value Typ.
-----------
Max.
-----30 --390
Unit
WPEP dB dBc % pF
053-7052 Rev - 10-2002
MS1079
www.datasheet4u.com
TYPICAL PERFORMANCE
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