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MS1226
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features
30 MHz 28 VOLTS IMD = -28 dB POUT = ...
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MS1226
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features
30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO VCEO VEBO IC PDISS TJ TSTG Co llector-base
Voltage Co llector-emitter
Voltage Emit ter-Base
Voltage Dev ice Current Po wer Dissipation Ju nction Temperature Storage Temperature
Paramete
r
65 36 4.0 4.5 80 +200 -65 to +150
Value
U
V V V A W C C
nit
Thermal Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
2.2
C/W
053-7055 Rev - 10-2002
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MS1226
STATIC
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Symbol
BVcbo BVces BVceo BVebo Icbo HFE IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V
Test Conditions Min.
IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 500 mA 65 65 35 4.0 --10
Value Typ.
-------------
Max.
--------1.0 200
Unit
V V V V mA ---
DYNAMIC DYNAMIC
Symbol
POUT GP IMD Cob Conditions f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz VCE = 28 V
Test Conditions Min.
PIN = 0.48W PIN = 0.48W PIN = 0.48W VCB = 30V ICQ = 25 mA VCE = 28V VCE = 28V VCE = 28V 30 18 -----
Value Typ.
----------
Max.
-----28 65
Unit
W dB dBC pf
053-7055 Rev - 10-2002
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MS1226
PACKAGE MECHANICAL DATA
053-7055 Rev...