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MS1253 Datasheet

Part Number MS1253
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS
Datasheet MS1253 DatasheetMS1253 Datasheet (PDF)

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1253 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS Features • • • • • 50 MHz 12.5 VOLTS POUT = 70 WATTS Gp = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION : The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely stable and capable of withstanding hi.

  MS1253   MS1253






Part Number MS1257
Manufacturers CIT
Logo CIT
Description CIT SWITCH
Datasheet MS1253 DatasheetMS1257 Datasheet (PDF)

www.DataSheet4U.com MS1257 SPDT 300mA @ 6VDC 10,000 cycles typical < 50 mΩ initial 180 +/- 50gF 3.0 mm 1000Vrms min > 100MΩ min -40°C to 85°C -40°C to 85°C SPECIFICATIONS Switch Function Electrical Ratings Electrical Life Contact Resistance Actuation Force Actuator Travel Dielectric Strength Insulation Resistance Operating Temperature Storage Temperature MATERIALS ←RoHS COMPLIANT Actuator Housing Cover Contacts Terminals 4/6 Nylon 4/6 Nylon Stainless Steel Phosphor Bronze, Silver Plated Brass.

  MS1253   MS1253







Part Number MS1252
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS
Datasheet MS1253 DatasheetMS1252 Datasheet (PDF)

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1252 RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS Features • • • • • FREQUENCY 160MHz VOLTAGE 13.6V COMMON EMITTER POWER OUT 40W POWER GAIN 9dB DESCRIPTION: The MS1252 is especially designed for VHF large signal amplifier applications in industrial and commercial FM equipment operating up to 175 MHz. Ideally suited for marine radio applications. ABSOLUTE MAXIM.

  MS1253   MS1253







Part Number MS1251
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Datasheet MS1253 DatasheetMS1251 Datasheet (PDF)

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1251 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • • • • • • • 175 MHz 12.5 VOLTS POUT = 45 WATTS GP = 6.5 dB MINIMUM INPUT MATCHED COMMON EMITTER CONFIGURATION VSWR = 20:1 DESCRIPTION: The MS1251 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V, Class C VHF communications. This device utilizes diffused emitter resistors to achieve 20:1 .

  MS1253   MS1253







Part Number MS125
Manufacturers Diotec Semiconductor
Logo Diotec Semiconductor
Description Surface Mount Si-Bridge-Rectifiers
Datasheet MS1253 DatasheetMS125 Datasheet (PDF)

MS40 ... MS500 MS40 ... MS500 Surface Mount Si-Bridge-Rectifiers Si-Brückengleichrichter für die Oberflächenmontage Version 2007-01-16 1.5-0.1 0.2 Nominal current Nennstrom 5.1 +0.2 0.5 A 40...500 V 3 x 3 x 1.5mm Super-MicroDIL 0.04 g 2.5 6.5 +0.2 Alternating input voltage Eingangswechselspannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. 0.7 1.1 2.5 6.9 max 3-0.1 + 0.5 Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging.

  MS1253   MS1253







RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1253 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS Features • • • • • 50 MHz 12.5 VOLTS POUT = 70 WATTS Gp = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION : The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely stable and capable of withstanding high VSWR under operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO PDISS IC TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Device Current Junction Temperature Storage Temperature Value 45 18 3.5 183 12.0 200 -65 to +150 Unit V V V W A °C °C Thermal Data RTH(J-C) Thermal Resistance Junction-case 1.05 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1253 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) Symbol BVcbo BVces BVebo BVceo Ices HFE IC = 50 mA IC = 100 mA IE = 10 mA IE = 50 mA VCE = 15 V VCE = 5 V STATIC Test Conditions IE = 0 mA VBE = 0 V IE = 0 mA IB = 0 mA IE = 0 mA IC = 5 A Value Min. 45 40 3.5 18 --10 Typ. ------.


2008-03-20 : W14B    MS1251    MS1252    MS1253    MS1257    93HC46    CAT93HC46    S7848    23226615xxxx    23226625xxxx   


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