MS1261

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1261 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features 175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1261 is a Class C 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This devices utilizes a gold metallized, emitter ballasted die geometry for superior reliability and infinite VSWR capability. www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 18 36 4.0 2.5 34 +200 -65 to +150 Unit V V V V A W ºC ºC T hermal Data RTH(J-C) Thermal Resistance Junction-case 8.75 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1261 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) Symbol BVCES BVCEO BVEBO ICBO HFE IC = 50 mA IC = 15 mA IE = 2.5 mA VCE = 15 V VCE = 5 V IC = 0mA IE = 0mA IC = 250mA Test Conditions VBE = 0V Value Min. 36 18 4.0 --20 Typ. ----------- Max. ------1 200 Unit V V V mA --- DYNAMIC Symbol POUT ηc GP COB f = 175 MHz f = 175 MHz ...