MS12N60

MS12N60 N-Channel Enhancement Mode Power MOSFET Description The MS12N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=6600V typically @ Tj=150°C Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Ballast Inverter Packing & Order Information Graphic symbol 50/Tube ; 1,000/Box x MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Pulsed Drain Current EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current dV/dt Peak Diode Recovery dV/dt Drain current limited by maximum junction temperature Value 600 ±30 12 7.2 48 870 22.5 12.0 3.5 Unit V V A A A mJ mJ A V/ns Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014 MS12N60 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol Parameter Power Dissipation (TC=25°C) PD Derating Factor above 25 °C Maximum Temperature for Soldering @ Lead at 0.125 TL in(0.318mm) from case for 10 seconds TSTG TJ Operating Junction Temperature Stora...