MS12N65

MS12N65 N-Channel Enhancement Mode Power MOSFET Description The MS12N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low gate charge ( typical 52nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant package Application Power Factor Correction LCD TV Power Full and Half Bridge Power Graphic symbol Packing Information Shipping：50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Pulsed Drain Current EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dV/dt Peak Diode Recovery dV/dt Value 650 ±30 12 7.4 48 865 23.1 4.5 Unit V V A A A mJ mJ V/ns Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014 MS12N65 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Power Dissipation (TC=25°C) PD Power Dissipation (TC=100°C) TJ/TSTG Operating Junction and Storage Temperature NOTE: 1. Repetitive rating; pulse width limited by maximum ...