MS1336

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features 175 MHz 12.5 VOLTS POUT = 30W MINIMUM GP = 10 dB GAIN COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. MS1336 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance Value 36 18 36 4.0 8.0 70 +200 -65 to +150 1.2 Unit V V V V A W °C °C ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1336 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol Test Conditions BVCES BVCEO BVEBO ICBO HFE IC = 15 mA IE = 50 mA IE = 5 mA VCB = 15 V VCE = 5 V VBE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 250 mA Min. 36 18 4.0 --20 Value Typ. ----------- Max. ------5 200 Unit V V V mA --- DYNAMI...