MS1337

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features 175 MHz 12.5 VOLTS POUT = 30W MINIMUM GP = 10 dB GAIN COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. MS1337 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VCES VEBO IC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current PDISS TJ Power Dissipation Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7069 Rev - 10-2002 Value 36 18 36 4.0 8.0 70 +200 -65 to +150 1.2 Unit V V V V A W °C °C °C/W MS1337 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol Test Conditions BVCES BVCEO BVEBO ICBO HFE IC = 15 mA IE = 50 mA IE = 5 mA VCB = 15 V VCE = 5 V VBE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 250 mA Min. 36 18 4.0 --20 Value Typ. --- --- --- --- --- Max. ------5 200 Unit V V V mA --- DYNAMIC Symbol POUT GP Cob f =175 MHz f =175 MHz f =1 MHz Test Conditions PIN = 3.0 W PIN = 3.0 W VCB = 15 V VCE =12.5 V VCE =12.5 V Min. 30 10 --- Value Typ. --- --- --- Max. --- --- 120 Unit W dB pf IMPEDANCE DATA FREQ ZIN(Ω) 175 MHz PIN = 3.0W VCE = 12.5V 1.0 +j0.4 ZCL(Ω) 2.3 + j0.1 053-7069 Rev - 10-2002 PACKAGE MECHANICAL DATA MS...