RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS
Features
• 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOL...
RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS
Features
800-900 MHz 24 VOLTS COMMON EMITTER GOLD METALIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION POUT = 30 W MIN. WITH 7.5 dB GAIN
MS1453
DESCRIPTION:
The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO VCES VEBO
IC PDISS
TJ
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Device Current Power Dissipation Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
Value
50 45 5.0 5.0 43 +200 -65 to +150
3.0
Unit
V V V A W °C °C
°C/W
MS1453.PDF 12-10-03
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