MS1510
RF PRODUCTS DIVISION
RF & MICROWAVE TRANSISTORS
P RODUCT P REVIEW
DESCRIPTION
KEY FEATURES
W W W . Microsemi ...
MS1510
RF PRODUCTS DIVISION
RF & MICROWAVE TRANSISTORS
P RODUCT P REVIEW
DESCRIPTION
KEY FEATURES
W W W . Microsemi . COM
The MS1510 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for broadband applications in the 450 – 512 MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR at rated operating conditions.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
470 MHz !" 12.5 Volts !" Efficiency 55% !" Common Emitter !" POUT = 38 W Min. !" GP = 5.8 dB Gain !"
APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS
UHF Mobile !" Applications
Symbol VCBO VCEO VEBO IC PDISS TJ TSTG
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value 36 16 4.0 8.0 117 +200 -65 to +150
Unit V V V A W °C °C
.500 6LFL (M111) EPOXY SEALED
THERMAL DATA
4 1
1.5 °C/W
RTH(j-c)
Junction-Case Thermal Resistance
MS1510
2 3
Copyright 2000 MSC1627.PDF 2000-12-03
Microsemi
RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
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MS1510
RF PRODUCTS DIVISION
RF & MICROWAVE TRANSISTORS
P RODUCT P REVIEW
W W W . Microsemi . COM
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Symbol BVCES BVCEO BVEBO ICES hFE IC = 15 mA IC = 50 mA IE = 5 mA VCB =12.5 V VCE = 5 V
Test Conditions VBE =...