MS1578

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1578 RF & MICROWAVE TRANSISTORS 800-960MHz CELLULAR BASE STATION Features GOLD METALLIZATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY POUT = 150 W PEP INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION 8.0dB GAIN @ 900 MHz MAX IMD -28dBc @ 150 W PEP 5:1 VSWR CAPABILITY @ RATED CONDITIONS 3 dB OVERDRIVE CAPABILITY DESCRIPTION: THE MS1578 IS A GOLD METALLIZED, EPITAXIAL SILICON, NPN PLANAR TRANSISTOR DESIGNED FOR HIGH LINEARITY CLASS AB OPERATION. DIFFUSED EMITTER BALLAST RESISTORS PROVIDE MAXIMUM RUGGEDNESS AND RELIABILITY FOR 900 MHz CELLULAR BASE STATION APPLICATIONS. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC PDISS TJ T STG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 28 65 3.5 25 300 +200 - 65 to + 150 Unit V V V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 0.60 ° C/W MSC0890.PDF MS1578 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° C) STATIC Symbol BVCBO BVCER BVCEO BVEBO IC = 50 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V ICEO hFE VCE = 5 V Tested per side Test Conditions Min. VBE = 0 V RBE = 75 Ω IB = 0 mA IC = 0 mA VBE = 0 V IC = 6 A 60 35 28 3.5 --25 Value Typ. ----------- Max. ------10 120 Unit V V V mA DYNAMIC Symbol GP* V C* IMD LOAD* MISMATCH VCC = 26...