MS15N60

MS15N60 N-Channel Enhancement Mode Power MOSFET Description The MS15N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Adapter Switching Mode Power Supply Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage ID IDM IAR EAS EAR dV/dt Drain Current -Continuous (TC=25°C) Drain Current -Continuous (TC=100°C) Drain Current -Pulsed Avalanche Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dV/dt TJ Storage Temperature Drain current limited by maximum junction temperature Value 600 ±30 15 9.5 60 15 245 24 9.8 150 Unit V V A A A A mJ mJ V/ns °C Publication Order Number: [MS15N60] © Bruckewell Technology Corporation Rev. A -2014 MS15N60 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Power Dissipation (TC=25°C) PD Derate above 25C TSTG TL Operating Junction and Storage Temperature Maximum lead temperature for soldering purposes, 1/8'' ...