MS2092

www.DataSheet4U.com MS2092 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES The MS2092 is an internally matched, common base silicon bipolar device optimized pulsed application in the 600 – 750 MHz frequency range. Housed in the industry standard AMPAC™ metal/ceramic package, this device uses a refractory/gold overlay die geometry for ruggedness and long-term reliability. § Refractory/Gold Metallization § Internal Input Matching § Metal/Ceramic Hermetic Package § POUT = 440 W Min. § GP = 7.0 dB Gain APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS § Avionics Applications ABSOLUTE MAXIMUM RATINGS (TCASE = 25° C) Symbol PDISS IC VCC TJ TSTG Parameter Power Dissipation* ( T C 75° C) Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA Value 1500 32.0 55 200 -65 to +200 Unit W A V °C °C RTH(j-c) Junction-Case Thermal Resistance 0.13 °C/W * Applies only to rated RF amplifier operation MS2092.PDF 2-10-04 Page 1 Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein DataSheet 4 U .com www.DataSheet4U.com MS2092 RF & MICROWAVE TRANSISTORS STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C) Symbol BVCBO BVEBO BVCER ICES ICBO hFE IC = 50 mA IE = 5 mA IC = 50mA VCE = 50 V VCB = 50 V VCE = 5 V Test Conditions IE = 0 mA IC = 0 mA RBE = 10 Ω Min. 65 3.5 65 MS2091 Typ. Max. Units V V V ...