MS20N06
N-Channel 60-V (D-S) MOSFET
Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching s...
MS20N06
N-Channel 60-V (D-S)
MOSFET
Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed RoHS compliant package Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Packing & Order Information Part No./ T:2,500/Reel Part No./ R:80/Tube , 4,000/Box
Graphic symbol
Publication Order Number: [MS20N06]
© Bruckewell Technology Corporation Rev. A -2014
MS20N06
N-Channel 60-V (D-S)
MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source
Voltage
VGS Gate-Source
Voltage ID Continuous Drain Currenta (TA =25°C) IDM Pulsed Drain Currentb IS Continuous Source Current (Diode Conduction)a PD Power Dissipationa (TA =25°C)
TJ/TSTG
Operating Junction and Storage Temperature
Value 60 ±20 19 75 72 50
-55 to +150
Unit V V A A A W °C
Thermal Characteristics
Symbol
Parameter
RθJC Junction-to-Case RθJA Junction-to-Ambienta
Notes: a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Maximum 3 40
Units °C/W
Static Symbol
VGS(th)
Parameter Gate-Threshold
Voltage
Test Conditions VDS = VGS, ID = -250μA
Min Typ. Max. Units 1V
IGSS Gate-Body Leakage
VDS = 0 V , VGS = ±20 V
±100 nA
IDSS ID(on)
Zero Gate
Voltage Drain Current On-State Drain CurrentA
VDS = 48 V , VGS = 0 V VDS = 48 V , VGS = 0 V , TJ= 55°C VDS = 5 V, VGS = 10 V
30
1 uA 25
A
r DS(on)
gfs
D...